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ts 1003 page 1 ? 201 4 s ilicon laboratories , inc. all rights reserved. features single 0.8v to 5.5v operation supply current: 0.6a (typ) input bias current: 2pa (typ) low tcv os : 9 v/c (typ) a vol driving 100k? load: 90db (min) gain - bandwidth product: 4khz unity gain stable rail - to - rail input and output no output phase reversal 5- pin sc70 or 5 - pin sot23 packaging applications battery/solar - powered instrumentation portable gas monitors low - voltage signal processing micro power active filters wireless remote sensors battery - powered industrial sensors active rfid readers powerline or battery current sensing handheld/portable pos te rminals description the ts1003 is the industrys first sub - 1a supply current, precision cmos operational amplifier fully specified to operate over a supply voltage range from 0.8v to 5.5v . fully specified at 1.8v, the ts1003 is optimized for ultra - long - life battery powered applications. the ts1003 is the fourth operational amplifier in the nanowatt analog? high - performance analog integrated circuits portfolio. the ts1003 exhibits a typical input bias current of 2pa, and has rail -to - rail inpu t and output stages. the ts1003 s combined features make it an excellent choice in applications where very low supply current and low operating supply voltage translate into very long equipment operating time. applications include: micro power active filt ers, wireless remote sensors, battery and powerline current sensors, portable gas monitors, and handheld/portable pos terminals. th e ts1003 is fully specified over the industrial temperature range (?40c to +85c) and is available in either a pcb - space saving 5- lead sc70 or a 5 - lead sot23 packag ing . percent of units - % 0% 5% 10% 15% 20 % 25 % 30 % 35 % supply current distribution the only 0.8v to 5.5 v, 0.6 a rail - to - rail single op amp typical application circuit a micro watt 2 - pole sallen key low pass filter 0. 48 0.5 3 0. 58 0.6 3 supply current - a v dd = 1.8v
ts 1003 page 2 ts1003 rev. 1.0 absolute maximum rat ings total supply voltage (v dd to v ss ) ............................. +6.0v voltage inputs (in+, in -) ........... (v ss - 0.3v) to (v dd + 0.3v) differential input voltage .......................................... 6 .0 v input current (in+, in -) ............................................ 20 ma output short - circuit duration to gnd ................... indefinite continuous power dissipation (t a = +70c) 5- pin sc70 (derate 3.87mw/c above +70c) .... 310 mw 5- pin sot23(derate 3.87mw/c above +70c) ... 312 mw operating temperature range ................... - 40c to +85c junction temperature ............................................ +150c storage temperature range .................... - 65c to +150c lead temperature (soldering, 10s) ........................... +300 electrical and thermal s tresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the sp ecifications is not implied. exposure to any absolute maximum rating conditions for extended periods may affect device reliability and lifetime . package/ordering information tape & reel order number part marking package quantity tape & reel order number part marking package quantity ts100 3ij5 tah --- ts100 3ig5 taea --- ts100 3ij5t 3000 ts100 3ig5t 3000 lead - free program: s ilicon labs supplies only lead - free packaging . consult s ilicon labs for products specified with wider operating temperature ranges.
ts1003 ts1003 rev. 1.0 page 3 electrical character istics v dd = + 1.8 v, v ss = 0v, v incm = v ss ; r l = 100k ? to (v dd -v ss )/2; t a = - 40c to +85c, unless otherwise noted. typical values are at t a = +25c. see note 1 parameters symbol conditions min typ max units supply voltage range v dd - v ss 0. 8 5.5 v supply current i sy r l = open circuit t a = 25 note 1: all specifications are 100% tested at t a = +25c. specification limits over temperature (t a = t min to t max ) are g uaranteed by device characterization , not production tested.
ts 1003 page 4 ts1003 rev. 1.0 typical performance characteristics supply current vs supply voltage supply curent - a supply voltage - volt supply current vs input common - mode voltage supply curent - a input common - mode voltage - volt supply current vs input common - mode voltage input offset voltage vs input common - mode voltage input offset voltage - mv input offset voltage - mv input common - mode voltage - volt input offset voltage vs supply voltage input common - mode voltage - volt supply curent - a supply voltage - volt v dd =1.8v t a = +25 input offset voltage vs input common - mode voltage input offset voltage - mv input common - mode voltage - volt v dd = 5.5v t a = +25 c 0.65 0.61 0.57 0.55 0 0.6 1.8 v dd =5.5v t a = +25 c 0.625 0.605 0.565 0.525 0 3.3 4.4 5.5 1.1 t a = +25
ts1003 ts1003 rev. 1.0 page 5 - 40 typical performance characteristics input bias current (i in+ , i in - ) vs input common - mode voltage input bias current - pa input common - mode voltage - volt output voltage high (v oh ) vs temperature, r load =100k ? temperature - c output voltage low (v ol ) vs temperature, r load =100k ? temperature - c output voltage high (v oh ) vs temperature, r load =10k ? output voltage low (v ol ) vs temperature, r load =10k ? input bias current (i in + , i in - ) vs input common - mode voltage output saturation voltage - mv input common - mode voltage - volt input bias current - pa output saturation voltage - mv v dd = 5.5v v dd =1.8v 0 0.6 1.2 1.8 0 1.1 3.3 4.5 5.5 2.2 6 - 6 - 4 4 30 20 - 30 - 20 10 r l = 100k ? v dd = 1.8v v dd = 5.5v r l = 100k ? v dd = 1.8v v dd = 5.5v 12 4 2 10 6 8 5 0 2 4 3 +25 +85 - 40 +25 +85 80 20 40 100 120 60 output saturation voltage - mv output saturation voltage - mv temperature -
ts 1003 page 6 ts1003 rev. 1.0 v out(n) - 100 v /div 0.1hz to 10hz output voltage noise typical performance characteristics output short circuit current, i sc+ vs temperature output short - circuit current - ma output short circuit current, i sc - vs temperature large - signal transient response v dd = 5.5v, v ss = gnd, r load = 100k ? , c load = 15pf 200 s/div output short - circuit current - ma input small - signal transient response v dd = 5.5v, v ss = gnd, r load = 100k ? , c load = 15pf 2ms/div output input output temperature - gain and phase vs. frequency gain - db frequency - hz phase - degrees 10 1k 10k 100 50 - 10 0 10 60 85 10 35 60 100k phase gain 4khz 70
ts1003 ts1003 rev. 1.0 page 7 pin functions pin label function 1 out amplifier output. 2 v ss negative supply or analog gnd. if applying a negative voltage to this pin, connect a 0.1f capacitor from this pin to analog gnd. 3 +in amplifier non - inverting input. 4 - in amplifier inverting input. 5 v dd positive supply connection. connect a 0.1f bypass capacitor from this pin to analog gnd. theory of operation the ts1003 is fully functional for an input signal from the negative supply (v ss or gnd) to the positive supply (v dd ). the input stage consists of two differential amplifiers, a p - channel cmos stage and an n - channel cmos stage that are active over different ranges of the input common mode voltage. the p - channel input pair is active for input common mode voltages, v incm , between the negative supply to app roximately 0.4 v below the positive supply. as the common - mode input voltage moves closer towards v dd , an internal current mirror activates the n- channel input pair differential pair. the p - channel input pair becomes inactive for the balance of the input common mode voltage range up to the positive supply. because both input stages have their own offset voltage (v os ) characteristic, the offset voltage of the ts1003 is a function of the applied input common - mode voltage, v incm . the v os has a c rossover point at ~ 0.4v from v dd (refer to the v os vs. v cm curve in the typical operating characteristics section). caution should be taken in applications where the input signal amplitude is comparable to the ts1003 s v os value and/or the design requires high accuracy. in these situations, it is necessary for the input signal to avoid the crossover point. in addition, amplifier parameters such as psrr and cmrr which involve the input offset voltage will also be affected by changes in the input common - mode voltage across the differential pair transition region. the second stage is a folded - cascode transistor arrangement that converts the input stage differential signals into a single - ended output. a complementary drive generator supplies current to the output transistors that swing rail to rail. the ts1003 output stages voltage swings within 3.7 mv from the rails at 1 .8v supply when driving an output load of 100k - which provides the maximum possibl e dynamic range at the output. this is particularly important when operating on low supply voltages. when driving a stiffer 10k load, the ts1003 swings within 30 mv of v dd and within 13 mv of v ss or gnd. applications informa tion portable gas detection sensor amplifier gas sensors are used in many different industrial and medical applications. gas sensors generate a current that is proportional to the percentage of a particular gas concentration sensed in an air s ample. this output current flows through a load resistor and the resultant voltage drop is amplified. depending on the sensed gas and sensitivity of the sensor, the output current can be in the range of tens of microamperes to a few milliamperes. gas senso r datasheets often specify a recommended load resistor value or a range of load resistors from which to choose. there are two main applications for oxygen sensors C applications which sense oxygen when it is abundantly present (that is, in air or near an oxygen tank) and those which detect traces of oxygen in parts -per - million concentration. in medical applications, oxygen sensors are used when air quality or oxygen delivered to a patient needs to be monitored. in fresh air, the concentration of oxygen is 20.9% and air samples containing less than 18% oxygen are considered dangerous. in industrial applications, oxygen sensors are used to detect the
ts 1003 page 8 ts1003 rev. 1.0 absence of oxygen; for example, vacuum - packaging of food products is one example. the circuit in figure 1 illustrates a typical implementation used to amplify the output o f an oxygen detector. the ts1003 makes an excellent choice for this application as it only draws 0.6 a of supply current and operates on supply voltages down to 0. 8 v. with the components sho wn in the figure, the circuit consumes less than 0.7 a of supply current ensuring that small form - factor single - or button - cell batteries (exhibiting low mah charge ratings) could last beyond the operating life of the oxygen sensor. the precis ion specifications of the ts1003 , such as its low offset voltage, low tcv os , low input bias current, high cmrr, and high psrr are oth er factors which make the ts1003 an excellent choice for this application. since oxygen sensors typically exhibit an operating life of one to two years, an oxygen sensor amplifier built around a ts1003 can operate from a conventionally - available single 1.5 - v alkaline aa battery for over 290 years! at such low power consumption from a single cell, the oxygen sensor could be replaced over 150 times before the battery requires replacing! micro watt, buffered single - pole low- pass filters when receiving low - level signals, limiting the bandwidth of the incoming signals into the system is often required. as shown in figure 2 , the simplest way to achieve this objective is to use an rc filter at the noninverting terminal of the ts1003 . if additional attenuation is needed, a two - pole sallen - key filter can be used to provide the additional attenuation as shown in figure 3. for best results, the filter s cutoff frequency should be 8 to 10 times lower than the ts1003 s crossover frequency. additional operational amplifier phase margin shift can be avoided if the amplifier bandwidth -to - signal bandwidth ratio is greater than 8. the design equations for the 2 - pole sallen- key low - pass filter are given below with component values selected to set a 4 00hz low - pass filter cutoff frequency : r1 = r2 = r = 1m? c1 = c2 = c = 4 00pf q = filter peaking factor = 1 fC 3db = 1/(2 x x rc) = 4 00 hz r3 = r 4 /(2 - 1/q) ; with q = 1, r3 = r4. a single +1.5 v supply, two op amp instrumentation amplifier the ts1003s ultra - low supply current and ultra- low voltage operation make it ideal for battery - powered applications such as the instrumentation amplifier shown in figure 4. figure 2 : a simple, sing le - pole active low - pass filter. figure 3: a micro power 2 -p ole sallen - key low - pass filter. figure 4: a two op amp instrumentation amplifier. figure 1 : a micr opower, precision oxygen gas sensor amplifier .
ts1003 ts1003 rev. 1.0 page 9 the circuit utilizes the classic two op amp instrumen tation amplifier topology with four resistors to set the gain. the equation is simply that of a noninverting amplifier as shown in the figure. the two resistors labeled r1 should be closely matched to each other as well as both resistors labeled r2 to ensu re acceptable common - mode rejection performance. resistor networks ensure the closest matching as well as matched drifts for good temperature stability. capacitor c1 is included to limit the bandwidth and, therefore, the noise in sensitive applications. the value of this capacitor should be adjusted depending on the desired closed - loop bandwidth of the inst rumentation amplifier. the rc combination creates a pole at a frequency equal to 1/ (2 r1c1). if the ac - cmrr is critical, then a matched capacitor to c1 should be included across the second resistor labeled r1. because the ts1003 accepts rail -to - rail inpu ts, the input common mode range includes both ground and the positive supply of 1.5v. furthermore, the rail -to - rail output range ensures the widest signal range possible and maximizes the dynamic range of the system. also, with its low supply current of 0 .6 a, this circuit consumes a quiescent current of only ~1.3 a, yet it still exhibits a 1-khz bandwidth at a circuit gain of 2. driving capacitive loads while the ts1003 s internal gain - bandwidth product is 4khz, it is capable of driving capacitive loads up to 50pf in voltage follower configurations without any additional components. in many applications, however, an operational amplifier is required to driv e much larger capacitive loads. the amplifiers output impedance and a l arge capacitive load create additional phase lag that further reduces the amplifiers phase margin. if enough phase delay is introduced, the amplifiers phase margin is reduced. the effect is quite evident when the transient response is observed as there will appear noticeable peaking/ringing in the output transient response. if the ts1003 is used in an application that require s driving larger capacitive loads , an isolation resistor between the output and the capacitive lo ad should be used as illustrated in figure 5. table 1 illustrates a range of r iso values as a function of the external c load on the output of the ts1003 . the power supply voltage used on the ts1003 at which these resistor values were determined empirically was 1.8v. the oscilloscope capture shown in figure 6 illustrates a typical transient response obtained with a c load = 1 00pf and an r iso = 12 0k?. note that as c load is increased a smaller r iso is needed for optimal transient response . in the event that an external r load in parallel with c load appears in the application, the use of an r iso results in gain accuracy loss because the external series r iso forms a voltage - divider with the external load resistor r load . external capacitive load, c load external output isolation resistor, r iso 0 - 50pf n ot required 100pf 120k 500pf 50k 1nf 33k 5nf 18k 10nf 13k figure 5: using an external resistor to isolate a c load from the ts1003s output v in v out
ts 1003 page 10 ts1003 rev. 1.0 configuring the ts1003 as micro watt analog comparator although optimized for use as an o perational amplifier, the ts1003 can also be used as a rail -to - rail i/o comparator as illustrated in figure 7. external hysteresis can be employed to minimize the risk of output oscillation. the positive feedback circuit causes the input threshold to change when the output voltage changes state. the diagram in figure 8 illustrates the ts1003s analog comparator hys teresis band and output transfer characteristic. the design of an analog comparator using the ts1003 is straightforward. in this application, a 3-v power supply (v dd ) was used and the resistor divider network formed by rd1 and rd2 generate d a convenient r eference voltage (v ref ) for the circuit at ? the supply voltage, or 1.5 v, while keeping the current drawn by this resistor divider low. capacitor c1 is used to filter any extraneous noise that could couple into the ts1003 s inverting input. in this application, the desired hysteresis band was set to 100mv (v hyb ) with a desired high trip - point (v hi ) set at 2. 1v and a desired low trip - point (v lo ) set at 2v. since the ts1003 is a very low supply current amplifier (0.6a, typical), it is desired that the design of an analog comparator using the ts1003 should also use as little current as practical. the first step in the design, therefore, was to set the feedback resistor r3: r3 = 10m? calculating a value for r1 is given by the following expression : r1 = r3 x (v hyb /v dd ) substituting v hyb = 100mv, v dd = 3 v, and r3 = 10m? into the equation above yields: r1 = 333 k? the following expression was then used to calculate a value for r2: r2 = 1/[v hi /(v ref x r1) C (1/r1) C (1/r3)] substituting v hi = 2. 1v, v ref = 1 .5v, r1 = 333 k?, and r3 = 10m? into the above expression yields: r2 = 909 k ? printed circuit board layout considerations even though the ts1003 operates from a single 0. 8 v to 5 .5v power supply and consumes very little supply current, it is always good engineering practice to bypass the power supplies with a 0.1f ceramic capacitor placed in close proximity to the v dd and v ss (or gnd) pins. good pcb layout techniques and analog ground plane management improve the performance of any analog circuit by decreasing the amount of stray capacitance that could be introduced at the op amp's inputs and outputs. excess stray capacitance can easily couple noise into the input leads of the op amp and excess stray capacitance at the output will add to any external capacitive load. therefore, pc board trace lengths and external component leads should be kept a short as practical to any of the ts1003 s package pins. second, it is also good engineering practice to route/remove any analog ground plane from the inputs and the output pins of the ts1003 . figure 8: analog comparator hysteresis band and output switching points. figure 7: a micro w att analog comparator with user - programmable hysteresis.
ts1003 ts1003 rev. 1.0 page 11 package outline draw ing 5- pin sc70 package outline drawing (n.b., drawings are not to sc ale) 1 3 4 5 0.65 typ. 2 1.30 typ. 0.15 - 0.30 1.80 - 2.20 1.15 - 1.35 0.26 - 0.46 0.275 - 0.575 2 1 lead frame thickness gauge plane 1 2 notes: does not include mold flash, protrusions or gate burrs. does not include inter-lead flash or protrusions. die is facing up for molding. die is facing down for trim/form. 3. 5. controlling dimensions in milimiters. all side 1.80 - 2.40 0.00 - 0.10 1.00 max 0.10 - 0.18 0.15 typ. 8o - 12o 0o - 8o 0.800 C 0.925 0.40 C 0.55 4 all specification comply to jedec spec mo-203 aa 6. all specifications refer to jedec mo-203 aa 7. lead span/stand off height/coplanarity are considered as special characteristic 0.10 max
ts 1003 page 12 s ilicon laboratories , inc. ts1003 rev. 1.0 400 west cesar chavez , austin , tx 78701 +1 ( 512 ) 416- 8500 ? www.silabs.com package outline draw ing 5- pin sot23 package outline drawing (n.b., drawings are not to scale) notes: 1. dimensions and tolerances are as per ansi y14.5m, 1982. 2. package surface to be matte finish vdi 11~13. 3. die is facing up mold and facing down for trim/form, ie, reverse trim/form. 4. the foot length measuring is based on the gauge plane method. 5. dimensions are exclusive of mold flash and gate burr. 6. dimensions are exclusive of solder plating. 7. all dimensions are in mm. 8. this part is compliant with eiaj spec. and jedec mo-178 aa 9. lead span/stand off height/coplanarity are considered as special characteristic. 5. 2.80 - 3.00 2.60 - 3.00 1.50 - 1.75 0.95 0.950 typ 5 5 0.30 - 0.50 0.00 - 0.15 10o typ 10o typ 10o typ 0.09 - 0.20 5 10o typ 0o- 8o 0.30 - 0.55 0.25 gauge plane 1.90 max 0.10 max 0.09 C 1.45 0.50 C 0.70 1.50 C 1.75 0.50 max 0.30 min 0.20 max 0.09 min 0.90 - 1.30 0.60 C 0.80 typ patent notice silicon labs invests in research and development to help our customers differentiate in the market with innovative low - power, small size, analog - intensive mixed - signal solutions. silicon labs extensive patent portfolio is a testament to our unique approach and world- class engineering team. the information in this document is believed to be accurate in all respects at the time of publication but is subect to chan ge without notice. silicon laboratories assumes no responsibility for errors and omissions, and disclaims responsibility for any consequences resulting from the use of information included herein. additionally, silicon laboratories assumes no responsibility for the functioning of undescribed features or parameters. silicon laboratories reserves t he right to make changes without further notice. silicon laboratories makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does silicon laboratori es assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. silicon laboratories products are not designed, intended, or authorized for use in appli catio ns intended to support or sustain life, or for any other application in which the failure of the silicon laboratories product could creat e a situation where personal inury or death may occur. should buyer purchase or use silicon laboratories products for any such unintended or unauthorized application, buyer shall indemnify and hold silicon laboratories harmless against all claims and damages. silicon laboratories and silicon labs are trademarks of silicon laboratories inc. other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders.
disclaimer silicon laboratories intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software implementers using or intending to use the silicon laboratories products. characterization data, available modules and peripherals, memory sizes and memory addresses refer to each specific device, and "typical" parameters provided can and do vary in different applications. application examples described herein are for illustrative purposes only. silicon laboratories reserves the right to make changes without further notice and limitation to product information, specifications, and descriptions herein, and does not give warranties as to the accuracy or completeness of the included information. silicon laboratories shall have no liability for the consequences of use of the information supplied herein. this document does not imply or express copyright licenses granted hereunder to design or fabricate any integrated circuits. the products must not be used within any life support system without the specific written consent of silicon laboratories. a "life support system" is any product or system intended to support or sustain life and/or health, which, if it fails, can be reasonably expected to result in significant personal injury or death. silicon laboratories products are generally not intended for military applications. silicon laboratories products shall under no circumstances be used in weapons of mass destruction including (but not limited to) nuclear, biological or chemical weapons, or missiles capable of delivering such weapons. trademark information silicon laboratories inc., silicon laboratories, silicon labs, silabs and the silicon labs logo, cmems?, efm, efm32, efr, energy micro, energy micro logo and combinations thereof, "the worlds most energy friendly microcontrollers", ember?, ezlink?, ezmac?, ezradio?, ezradiopro?, dspll?, isomodem ?, precision32?, proslic?, siphy?, usbxpress? and others are trademarks or registered trademarks of silicon laboratories inc. arm, cortex, cortex-m3 and thumb are trademarks or registered trademarks of arm holdings. keil is a registered trademark of arm limited. all other products or brand names mentioned herein are trademarks of their respective holders. http://www.silabs.com silicon laboratories inc. 400 west cesar chavez austin, tx 78701 usa smart. connected. energy-friendly products www.silabs.com/products quality www.silabs.com/quality support and community community.silabs.com

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